New PDF release: Advanced Electrical and Electronics Engineering: Volume 2

By Yi An Cui, En Ming Xiang (auth.), Jian Lee (eds.)

ISBN-10: 3642197116

ISBN-13: 9783642197116

2010 First foreign convention on electric and Electronics Engineering used to be held in Wuhan, China December 4-5. complex electric and Electronics Engineering booklet comprises seventy two revised and prolonged learn articles written through favorite researchers partaking within the convention. themes coated contain, energy Engineering, Telecommunication, keep an eye on engineering, sign processing, Iintegrated circuit, digital amplifier, Nano-technologies, Circuits and networks, Microelectronics, Analog circuits, electronic circuits, Nonlinear circuits, Mixed-mode circuits, Circuits layout, Sensors, CAD instruments, DNA computing, Superconductivity circuits. electric and Electronics Engineering will supply the nation of artwork of great advances in electric and Electronics Engineering and in addition function an exceptional reference paintings for researchers and graduate scholars operating with/on electric and Electronics Engineering.

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Additional resources for Advanced Electrical and Electronics Engineering: Volume 2

Example text

41. Wiley, New York (1987) 3. : Numerical analysis of localcontrol for high-speed lowloss P-i-N diode design. IEEE Trans. Power Electron 14(4), 615 (1999) 4. : High Speed, Soft Recovery, Epitaxial Diodes for Power Inverter Circuits. In: IEEE Industrial Application Society Meeting Digest, pp. 797–800 (1981) 5. : Optimum lifetime structure insilicon power diodes by means of various irradiation tech-niques. Nuclear Instruments and Methods in Physics Re-search B 186, 414 (2002) 6. : A Simple Power Diode Model with Forward and Reverse Recovery.

The effects of different minority carrier lifetime on recovery time trr and forward voltage drop have been simulated and analyzed. The results are shown in Figure6, Figure7 and Figure8. Optimization Design of Lifetime Distribution in Power Diode Fig. 6. The effect of the lifetime reverse recovery time trr τ P∗ on the Fig. 7. The effect of the lifetime forward voltage drop VF 41 τ P∗ on the Figure 6 shows that the reverse recovery time trr is reduced from 420ns to 340ns with the lifetime less than τ P∗ −5 being decreased from 1 × 10 s to 1× 10−7 s.

7 to design structure parameters of high power double-base P+PINN+ structured fast soft recovery diodes. Platinum doping and electron irradiating technologies are used to mutually control the base minority carrier lifetime and distrbution, the design method is used to optimize the structure parameter of ZKR300A/ 2500V. The design parameters were tested and verified through experiments, which proved the parameters of diodes meet the designed target and achieved the level of similar products in abroad countries.

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Advanced Electrical and Electronics Engineering: Volume 2 by Yi An Cui, En Ming Xiang (auth.), Jian Lee (eds.)

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